Foreign electromagnetic effect chips have always had an advantage, but in recent years, after a team of experts in chips and nanomaterials composed of overseas returnees returned to China, we have achieved a breakthrough in tunnel magnetoresistance technology, and Chinese chips have finally taken a certain advantage in a certain sub category. The editor will explore this high-precision together with this teamcurrent sensor Development characteristics and product performance:

1. The current sensor of TMR tunneling magnetoresistance technology does not have a magnetic core, which avoids the bias caused by hysteresis effect and temperature drift caused by the magnetic core. 2. The unique layout of TMR current sensors can resist external electromagnetic interference, mainly referring to the layout where the detected magnetic field is parallel to the detection chip. 3. The TMR current sensor adopts a gradient differential structure to monitor the magnetic field, further improving accuracy.

The current sensor made from this Chinese chip has better temperature stability, higher sensitivity, lower power consumption, better linearity, and does not require additional magnetic ring structures; Compared to AMR components, it has better temperature stability, higher sensitivity, wider linear range, and does not require additional set/reset coil structures; Compared to GMR components, it has better temperature stability, higher sensitivity, lower power consumption, and wider linear range.